KEY FEATURES
European version:LTE550C-E
Quad Band LTE: 800/900/1800/2600 MHz, FDD-Band (20,8,3,7)
Tri Band UMTS (WCDMA): 900/1800/2100 MHz, FDD-Band (8,3,1)
Dual Band GSM/GPRS/EDGE: 900/1800 MHz
U.S. version LTE-550C-US.
Quad Band LTE: 700/850/AWS(1700/2100)/1900 MHz,
Tri Band UMTS (WCDMA): 850AWS(1700/2100)/1900 MHz,
Quad Band GSM/GRPS/EDGE: 850/900/1800/1900 MHz

Speed:
LTE: DL: max. 100 Mbps, UL: max. 50 Mbps, 2x2 DL MIMO
HSPA+ : DL Cat.24 / UL Cat. 6, Dual Carrier
DL: max. 42 Mbps, UL: max. 5.76 Mbps
UMTS: DL: max. 384 kbps, UL: max. 384 kbps
EDGE: Class 12 data rates DL: max. 237 kbps, UL: max. 237 kbps
GPRS: Class 12 data rates DL: max. 85.6 kbps, UL: max. 85.6 kbps
WiFi
802.11b/g/n 2.4GHz，2T2R，up to 300 Mbps.
INTERFACES
• 1 SIM card interface (3V/1.8V)
• Power supply
• External 2 SMA antenna interface for WiFi 2T2R
 External 2 SMA antenna interface for LTE MIMO.
•Power: 6 Volts ~ 34 Volts (Normal 12Volts 1.5 Amps power supply)
•1 USB OTG (connector USB micro B)
•2 0dB SMA connector for 3G(1 3G main, 1 GPS active), or for 4G which has 3 0dB SMA connectors(1 LTE main, 1 LTE diversity, 1 GPS). GPS is optional.
•Ethernet : 2 Port (10/100/1000 MBps)
•1 of 2 Port support PoE 37V-48(57)V 802.3af.
•1 DB9 Connector
Switch able between RS232 and RS485/422
•4 PIN connector for console, Power(3.3Volts), RX, TX, GNG
•4 Digital I/O
 Software configurable I/O. It is isolated from the processor. It will be able to handle 500V between signal and device.  They will have a single ground pin for both ports.  The Output will be an open collector type.  The input will support up to 30VDC
•4 Analogue I/O
 Voltage input supporting 0-10VDC.  Alternatively the input will detect a current input supporting 4-20mA.  There will be one pin for ground and there may be two pins for input: one for voltage input, one for current input.  The input type will be configurable via software.
•RTC Backup CAP (7 Days Cover)